Nanofabrication service

Dry etching - Deep Reactive-Ion Etching and Ion Beam Etching

Deep Reactive-Ion Etching (DRIE)

The DRIE tool is an ICP etch tool configured for deep silicon etching via the Bosch process. Our DRIE is suitable for deep silicon etching masked with resist or SiO2, and SiO2 mask breakthrough etches.

We can process devices at low or high frequency electrode bias, with pulsed bias possible at low frequencies to minimise trenching of large features during frontside SOI etches, 300-900 nm spectrum endpoint detection, fast switching ALD valves, impedance monitoring of the inductive plasma, and morphing of process parameters with time in software.

Our DRIE tool can accept 100, 150, or 200 mm wafers and includes a load lock mechanism to minimise chamber pumping time and contamination.


  • Through silicon via (TSV)
  • High aspect ratio etching
Ion Beam Etching (IBE)

Ion Beam etching works on a similar principle to RIE but unlike this tool, the IBE etching mechanism is assisted by an energised ion beam, enabling it to achieve very high aspect ratio profiles, high etch rate and uniformity over a large sample.

Our IBE tool accepts up to 200 mm wafers and uses a clamp to hold wafers and chucks against the platen for helium backside cooling.

The sample under etch can be tilted up to 90 degrees with respect to the incident beam. This allows a positive wall angle that results from a perpendicular physical etch process to be offset, and opens up the possibility of angled etch features.